Defect study of Cu2ZnSn(S,Se)4 thin film with different Cu/Sn ratio by admittance spectroscopy

Author

Xianjia Luo ; Islam, Md Minarul ; Halim, Mohammad Abdul ; Xu, Changsheng ; Sakurai, Takayasu ; Sakai, Noriyuki ; Kato, Toshihiko ; Sugimoto, Hiroshi ; Tampo, Hitoshi ; Shibata, Hajime ; Niki, Shigeru ; Akimoto, Katsuhiro

Author_Institution

Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba, Japan

fYear

2014

fDate

8-13 June 2014

Firstpage

2366

Lastpage

2369

Abstract

Defect properties of Cu₂ZnSn(S_x,Se_1-x)₄ (CZTSSe) were investigated by admittance spectroscopy (AS). Two defect states (labeled E_A1 and E_A2) were observed in CZTSSe (x=0.15) with different Cu/Sn ratio. When the Cu/Sn ratio increased from 1.75 to 1.95, the activation energy of E_A1 and E_A2 decreased and the defect densities increased. The capture cross sections of E_A1 and E_A2 defects are in the order from 10^-16 cm² to 10^-18 cm², indicating that these two defects possibly do not impact on device performance.

Keywords

copper compounds; defect absorption spectra; defect states; semiconductor materials; semiconductor thin films; solar cells; tin compounds; zinc compounds; Cu₂ZnSn(SSe)₄; activation energy; admittance spectroscopy; capture cross sections; defect densities; defect states; solar cells; thin film; Artificial intelligence; Lead; Semiconductor device measurement; Tin; Cu2ZnSn(S,Se)4; Cu2ZnSnS4; admittance spectroscopy; capture cross section; defects;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/PVSC.2014.6925402

Filename

6925402