• DocumentCode
    1220563
  • Title

    Properties of very thin thermally nitrided-SiO2/Si interface based on conductance and hot-electron injection techniques

  • Author

    Liu, Zhihong H. ; Cheng, Yu Chung

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
  • Volume
    36
  • Issue
    9
  • fYear
    1989
  • fDate
    9/1/1989 12:00:00 AM
  • Firstpage
    1629
  • Lastpage
    1633
  • Abstract
    The properties of a thermally nitrided SiO2/Si interface were investigated by conductance and hot-electron injection techniques. The results showed that a strong correlation exists between nitridation conditions and interface properties. The nitridation greatly increased the hole capture cross section as well as the nonuniformity of surface potential, whereas the hardness of the interface against hot-electron bombardment was enhanced. These phenomena may be attributed to the nitridation-induced structural change rather than the hydrogen and oxygen-hydrogen radicals. Nitridation at low temperature, over a long period of time, is preferable for improving the interfacial characteristics
  • Keywords
    dielectric thin films; semiconductor technology; semiconductor-insulator boundaries; silicon compounds; SixOyNz-Si; conductance measurement techniques; hardness against hot electron bombardment; hole capture cross section; hot-electron injection techniques; interface properties; interfacial characteristics; nitridation conditions; nonuniformity of surface potential; thermal nitridation; Conductive films; Fluctuations; Hydrogen; Interface states; Rough surfaces; Secondary generated hot electron injection; Silicon; Surface roughness; Temperature; Thermal conductivity;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.34223
  • Filename
    34223
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1220563