Title :
Alpha-particle-induced charge collection measurements for megabit DRAM cells
Author :
Takeuchi, Kan ; Shimohigashi, Katsuhiro ; Takeda, Eiji ; Yamasaki, Eiji ; Toyabe, Toru ; Itoh, Kiyoo
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
9/1/1989 12:00:00 AM
Abstract :
An alpha-particle-induced charge collection mechanism for megabit DRAM cells was studied using an experimental method for 1-bit cell test structures with storage areas of 1 to 30 μm2. The dependence of the critical charge Qc for soft errors on the cell size and p+ barriers was extensively examined. Qc was found to be proportional to the diagonal length of the depletion region. In addition, charge collection in the presence of p+ barriers was enhanced by charge multiplication through the weak avalanche effect
Keywords :
MOS integrated circuits; VLSI; alpha-particles; integrated circuit technology; integrated memory circuits; random-access storage; semiconductor device models; 1 Mbit; 1-bit cell test structures; alpha particle induced soft errors; alpha-particle-induced charge collection mechanism; cell size; charge collection measurements; charge multiplication; critical charge; depletion region; diagonal length; megabit DRAM cells; p+ barriers; soft errors; storage areas; weak avalanche effect; Area measurement; Charge measurement; Current measurement; Laboratories; Proposals; Random access memory; Testing; Time measurement; Very large scale integration; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
