The nonequilibrium inversion layer charge of the thin-film SOI MOSFET

Author

Ortiz-Conde, Adelmo ; Sanchez, Francisco J Garcia ; Schmidt, Pierre E. ; Sa-Neto, Augusto

Author_Institution

Dept. of Electron., Simon Bolivar Univ., Caracas, Venezuela

Volume

36

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

1651

Lastpage

1656

Abstract

A previous charge-sheet model (A. Ortiz-Conde et al., Solid-State Electron., vol.31, p.1497-1500, Oct. 1988) for the equilibrium inversion layer charge of the thin-film SOI MOSFET is extended to account for nonequilibrium conditions, which occur under normal operation of the device. This is of vital importance to an analytical description of its current-voltage characteristics. The extended model is valid for all inversion conditions and accounts for the charge coupling between the front and back gates. The resulting analytical expression for the inversion-layer charge produces an error of less than 5% with respect to the numerical results obtained from the one-dimensional Poisson equation with the approximation of quasi-equilibrium

Keywords

insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; thin film transistors; analytical expression; charge coupling; current-voltage characteristics; inversion conditions; model; nonequilibrium conditions; nonequilibrium inversion layer charge; normal operation; thin-film SOI MOSFET; Capacitance; Computer hacking; Current-voltage characteristics; Electrons; Equations; MOSFET circuits; Semiconductor films; Thin film devices; Transistors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.34227

Filename

34227