Title :
The Electroacoustic Gain Interaction in III-V Compounds: Gallium Arsenide
Author :
Hickernell, F.S.
fDate :
7/1/1966 12:00:00 AM
Keywords :
Attenuation; Frequency; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Variable speed drives;
Journal_Title :
Sonics and Ultrasonics, IEEE Transactions on
DOI :
10.1109/T-SU.1966.29379
