Title :
Common-emitter current gain of AlxGa1-xAs/GaAs/GaAs heterojunction bipolar transistors operating at small collector current
Author_Institution :
Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA
fDate :
9/1/1989 12:00:00 AM
Abstract :
A recently developed current gain model, which accounts for high-current effects and can adequately characterize the current gain at high collector current, is improved by including both interfacial and bulk space-charge-region recombination currents, resulting in a comprehensive model that predicts the current gain more accurately at small collector currents. Comparison of the model and measured data for an Al0.25Ga0.75/GaAs/GaAs heterojunction bipolar transistor is included in support of the model
Keywords :
III-V semiconductors; aluminium compounds; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AlxGa1-xAs-GaAs; HBT; III-V semiconductors; bulk space-charge-region; common-emitter current gain; current gain model; heterojunction bipolar transistors; high-current effects; interfacial space-charge region; recombination currents; small collector current; Bipolar transistors; Charge carrier processes; Current density; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Predictive models; Semiconductor process modeling; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
