Title :
Process design of a novel shielded SBD and its device characteristics
Author :
Sagara, Kazuhiko ; Onai, Takahiro ; Homma, Noriyuki ; Nakamura, Tohru
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
9/1/1989 12:00:00 AM
Abstract :
A shielded Schottky-barrier diode that has the shielding p-layer between the active n-layer and the n+-buried layer is described. To demonstrate the shielding effect, it is shown experimentally that the maximum collected charge is less than 3/5 that of the conventional Schottky-barrier diode
Keywords :
Schottky-barrier diodes; semiconductor switches; Schottky-barrier diode; active n-layer; device characteristics; fabrication; n+-buried layer; semiconductor switch; shielded SBD; shielding p-layer; Boron; Capacitance; Circuits; Fabrication; Noise generators; Process design; Random access memory; Schottky diodes; Semiconductor films; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
