• DocumentCode
    1221432
  • Title

    Low-temperature fabrication of high-mobility poly-Si TFTs for large-area LCDs

  • Author

    Serikawa, Tadashi ; Shirai, Seiiti ; Okamoto, Akio ; Suyama, Shiro

  • Author_Institution
    NTT Appl. Electron. Lab., Tokyo, Japan
  • Volume
    36
  • Issue
    9
  • fYear
    1989
  • fDate
    9/1/1989 12:00:00 AM
  • Firstpage
    1929
  • Lastpage
    1933
  • Abstract
    A low-temperature process developed for fabrication of high-mobility polycrystalline silicon thin-film transistors (poly-Si TFTs) is discussed. Its main feature is the use of a sputter-deposited Si film followed by laser irradiation and a sputter-deposited gate SiO 2 film. The poly-Si TFTs have a mobility of 350-cm2/V-s. They have been successfully applied to peripheral circuits for large-area liquid-crystal displays (LCDs)
  • Keywords
    elemental semiconductors; liquid crystal displays; silicon; silicon compounds; sputter deposition; thin film transistors; Si-SiO2; TFTs; high-mobility; large-area LCDs; laser irradiation; low-temperature process; peripheral circuits; polysilicon; Amorphous materials; Circuits; Fabrication; Liquid crystal displays; Semiconductor films; Silicon; Sputtering; Substrates; Temperature; Thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.34272
  • Filename
    34272
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1221432