Title :
A full-color LCD addressed by poly-Si TFTs fabricated below 450°C
Author :
Yuki, Masanori ; Masumo, Kunio ; Kunigita, Masaya
Author_Institution :
Asahi Glass Co., Yokohama, Japan
fDate :
9/1/1989 12:00:00 AM
Abstract :
Poly-Si thin-film transistors (TFTs) fabricated with a maximum processing temperature of 450°C by means of laser-induced crystallization of a-Si are discussed. These devices show high mobilities (50 cm2/V-s), low threshold voltages (2 V), low off current (10-12 A), and high reliability. A 3.5-in.-diagonal full-color liquid-crystal display addressed by these poly-Si TFTs is presented
Keywords :
elemental semiconductors; liquid crystal displays; silicon; thin film transistors; 450 degC; Si; TFTs; full-color LCD; laser-induced crystallization; maximum processing temperature; mobilities; off current; polysilicon; reliability; threshold voltages; Annealing; Chromium; Crystallization; Fabrication; Glass; Productivity; Semiconductor lasers; Substrates; Temperature; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
