Title :
Dominant factors determining the threshold voltage for thin-film electroluminescent devices
Author :
Hirabayashi, Katsuhiko ; Shibata, Tomohiro ; Kozawaguchi, Haruki
Author_Institution :
NTT Opto-electron. Lab., Ibaraki, Japan
fDate :
9/1/1989 12:00:00 AM
Abstract :
The dominant factors determining electric-field clamping for thin-film electroluminescent devices are described. It is shown that clamped electric-fields depend on emission layer conductivity. Clamped electric-field strengths decrease with increases in conductivity, which can be controlled by emission-layer preparation methods and growth conditions
Keywords :
electric fields; luminescent devices; electric-field clamping; emission layer conductivity; emission-layer preparation methods; growth conditions; thin-film electroluminescent devices; threshold voltage; Clamps; Conductivity; Current measurement; Dielectrics and electrical insulation; Electroluminescent devices; High-K gate dielectrics; MOCVD; Thin film devices; Threshold voltage; Zinc compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
