مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

1221469

Title :

Dielectrics for bright EL displays

Author :

Tiku, Shiban K. ; Rustomji, Sam H.

Author_Institution :

Sigmatron Nova Inc., Thousand Oaks, CA, USA

Volume :

Issue :

fYear :

1989

fDate :

9/1/1989 12:00:00 AM

Firstpage :

1947

Lastpage :

1952

Abstract :

Electroluminescent (EL) display design for high brightness is discussed. Single-layer and stacked dielectrics based on aluminum oxide, tantalum oxide, and silicon oxynitride are compared, and total stack designs are optimized for high brightness and manufacturability. Brightness values of 1 fL/Hz at V_t+30 V have been achieved

Keywords :

brightness; electroluminescent displays; Al₂O₃; SiON; Ta₂O₅; bright EL displays; brightness; manufacturability; single-layer dielectrics; stacked dielectrics; total stack designs; Aluminum oxide; Brightness; Dielectrics; Displays; Electrons; Interface states; Manufacturing; Optimized production technology; Phosphors; Sputtering;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/16.34276

Filename :

34276

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1221469