Title :
Intentionally inserted oxygen depleted (Ba0.5Sr0.5)TiO3 layers as a model of DC-electrical degradation
Author_Institution :
Taiyo Yuden Co. Ltd., Gunma, Japan
Abstract :
The relative dielectric constant versus voltage (εr-V) characteristics and the current density versus electric field (J-E) characteristics of (Ba0.5Sr0.5)TiO3 films, which have intentionally inserted oxygen depleted layers near the bottom electrodes, were investigated as a model of dc-electrical degradation phenomena. Our investigation demonstrated that the intentionally inserted oxygen depleted layer is the cause of the tunneling conduction.
Keywords :
barium compounds; current density; dielectric devices; dielectric polarisation; electric fields; permittivity; semiconductor thin films; titanium compounds; Ba0.5Sr0.5TiO3 layers; BaSrTiO3; current density; dc-electrical degradation; dielectric devices; dielectric polarization; electric field; electrodes; relative dielectric constant; tunneling conduction; voltage characteristics; Binary search trees; Capacitors; Degradation; Electrodes; Ordinary magnetoresistance; Oxygen; Strontium; Transistors; Tunneling; Voltage;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2004.838421
