Title :
Growth and characterization of GaAs/GaPAs metamorphic, epitaxial nanostructures
Author :
Ahrenkiel, Phil ; Nan Zheng ; Street, Joseph
Author_Institution :
South Dakota Sch. of Mines & Technol., Rapid City, SD, USA
Abstract :
We discuss metamorphic, epitaxial nanostructures, using the III-V system GaAs/GaPAs as a particular example. The materials were synthesized by low-pressure metalorganic chemical vapor deposition, incorporating strain-engineered compositional grades. Vertically aligned, quantum-dot-array like structures were observed by cross-sectional transmission electron microscopy of short-period superlattice regions. Z-contrast images and geometric phase analysis of lattice images both confirm the presence of coherent GaAs dots within GaPAs barriers.
Keywords :
chemical vapour deposition; gallium arsenide; nanostructured materials; quantum dots; solar cells; transmission electron microscopy; Z-contrast images; cross-sectional transmission electron microscopy; epitaxial nanostructures; geometric phase analysis; lattice images; low-pressure metalorganic chemical vapor deposition; metamorphic nanostructures; quantum-dot-array like structures; short-period superlattice regions; strain-engineered compositional grades; vertically aligned structures; Abstracts; Epitaxial growth; Epitaxial layers; Gallium arsenide; Green products; Indexes; epitaxial nanostructures; lattice mismatch; metamorphic growth; transmission electron microscopy;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925528
