DocumentCode :
122184
Title :
Transport modeling of InGaN/GaN multiple quantum well solar cells
Author :
Cavassilas, N. ; Michelini, Fabienne ; Bescond, M.
Author_Institution :
IM2NP, Marseille, France
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
2875
Lastpage :
2877
Abstract :
This theoretical work analyzes photovoltaic effect in InGaN/GaN solar cells. Our electronic transport model considers intrinsic quantum behaviors like confinement, tunneling, electron-phonon scattering and electron-photon interactions. Based on this model we compare performances of Multiple Quantum Wells (MQW) structure with those of thick-layer device. We show that MQW is a promising candidate that provides better current characteristics. This work sheds light on the importance of finding a good balance between photon-absorption efficiency and transport properties. We also show the unintuitive influence of electron-phonon scattering.
Keywords :
III-V semiconductors; electron-phonon interactions; gallium compounds; indium compounds; quantum wells; solar cells; tunnelling; InGaN-GaN; confinement; electron phonon scattering; electron photon interactions; electronic transport model; intrinsic quantum behaviors; multiple quantum well solar cells; photon absorption efficiency; photovoltaic effect; thick layer device; transport modeling; transport properties; tunneling; Gallium nitride; Phonons; Photonics; Photovoltaic cells; Quantum well devices; Scattering; Tunneling; Gallium nitride; Indium gallium nitride; Photovoltaic cells; Quantum well devices; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
Type :
conf
DOI :
10.1109/PVSC.2014.6925532
Filename :
6925532
Link To Document :
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