DocumentCode :
122204
Title :
Investigation of electrical properties on industrial PERC mono-like Si solar cell
Author :
Yu-Hsuan Chang ; Shang-Jue Su ; Po-Sheng Huang ; Li-Wei Cheng
Author_Institution :
Topcell solar Int. Co., Ltd., Guanyin, Taiwan
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
2960
Lastpage :
2962
Abstract :
Utilizing PERC process, absolutely efficiency benefit of single crystalline Si solar cell with SiO2/SiNx passivation layer is 0.85% and mono-like Si solar cell is 0.44% only. With bias light intensity > 0.012 Suns, the SiO2/SiNx induced shunt path could be reduced and showed closed response with 1 Sun. The photoluminescence and internal quantum efficiency analysis reveal the mono region of mono-like Si cell showed closed passivation and bulk quality with c-Si cell. Sub-grain region of mono-like Si wafer shows less red response increment of than mono region which might resulted from poor bulk quality.
Keywords :
elemental semiconductors; passivation; photoluminescence; silicon; silicon compounds; solar cells; Si-SiO2-SiNx; electrical property; industrial PERC monolike Si solar cell; internal quantum efficiency analysis; passivation layer; photoluminescence; Europe; Indexes; MONOS devices; Photovoltaic systems; Radiative recombination; Silicon; Mono-like Si; PERC; Sub-grain; internal quantum efficiency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
Type :
conf
DOI :
10.1109/PVSC.2014.6925552
Filename :
6925552
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=122204
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