DocumentCode
1222057
Title
Dual mesh approach for semiconductor device simulator
Author
Kojima, T. ; Saito, Y. ; Dang, R.
Author_Institution
Coll. of Eng., Hosei Univ., Tokyo, Japan
Volume
25
Issue
4
fYear
1989
fDate
7/1/1989 12:00:00 AM
Firstpage
2953
Lastpage
2955
Abstract
A discretization approach for 2-D simulation of semiconductor devices is proposed. The approach essentially makes use of two interlaced dual-mesh systems based on Delaunay triangles and associated Voronoi polygons, respectively. The method is applied to the solution of Poisson´s equation for a reverse-biased p-n junction. Potential, field, and carrier distributions as well as junction capacitances are obtained, showing good agreement with conventional methods and the potential for improving simulation cost performance
Keywords
semiconductor device models; 2-D simulation; Delaunay triangles; Poisson´s equation; Voronoi polygons; discretization approach; interlaced dual-mesh systems; reverse-biased p-n junction; semiconductor device simulator; Capacitance; Charge carrier processes; Costs; Educational institutions; Integral equations; Nonlinear equations; Numerical simulation; P-n junctions; Poisson equations; Semiconductor devices;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.34335
Filename
34335
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