Continuous-wave operation of 1.55-μm vertical-cavity surface-emitting laser with digital-alloy active region using submonolayer superlattices

Author

Reddy, M.H.M. ; Buell, D.A. ; Feezell, D. ; Asano, T. ; Koda, R. ; Huntington, A.S. ; Coldren, L.A.

Author_Institution

Dept. of Electr. Eng. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA

Volume

15

Issue

7

fYear

2003

fDate

7/1/2003 12:00:00 AM

Firstpage

891

Lastpage

893

Abstract

For the first time, a digital-alloy active region (DAAR) consisting of submonolayer superlattices was used in a 1.55-μm vertical-cavity surface-emitting laser. The device showed continuous-wave operation with a room-temperature threshold current (I/sub th/) of 1.2 mA, maximum output power (P_max) of 0.26 mW, and a differential quantum efficiency (/spl eta//sub d/) of 21%. These results indicate that the DAAR is at least as efficient as the analog-alloy active region and provides much better control of alloy composition and strain.

Keywords

distributed Bragg reflector lasers; molecular beam epitaxial growth; quantum well lasers; semiconductor superlattices; surface emitting lasers; 0.26 mW; 1.2 mA; 1.55 micron; 1.55-/spl mu/m vertical-cavity surface-emitting laser; 21 percent; alloy composition; analog-alloy active region; continuous-wave operation; differential quantum efficiency; digital-alloy active region; maximum output power; room-temperature threshold current; strain; submonolayer superlattices; Contacts; Indium phosphide; Molecular beam epitaxial growth; Optical losses; Optical superlattices; Semiconductor lasers; Surface emitting lasers; Thermal conductivity; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.813405

Filename

1206752