Title :
High-power nearly diffraction-limited AlGaAs-InGaAs semiconductor slab-coupled optical waveguide laser
Author :
Huang, R.K. ; Donnelly, J.P. ; Missaggia, L.J. ; Harris, C.T. ; Plant, J. ; Mull, D.E. ; Goodhue, W.D.
Author_Institution :
Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA, USA
fDate :
7/1/2003 12:00:00 AM
Abstract :
Beam-quality measurements on the output of a 915-nm AlGaAs-InGaAs-GaAs slab-coupled optical waveguide laser (SCOWL) are reported. This device had a nearly circular mode (3.8 μm by 3.4 μm 1/e2 widths in the near-field) and was capable of a single-ended continuous-wave output power of greater than 1 W. Measurements of M2 indicate that the SCOWL output beam is nearly diffraction-limited in both directions with M/sub x/2 /spl sim/ M/sub y/2 /spl sim/ 1.1 over the entire range of output powers measured.
Keywords :
CCD image sensors; III-V semiconductors; aluminium compounds; brightness; gallium arsenide; indium compounds; laser beams; laser modes; laser variables measurement; light diffraction; quantum well lasers; waveguide lasers; 3.4 micron; 3.8 micron; 915 nm; AlGaAs-InGaAs; high-power nearly diffraction-limited AlGaAs-InGaAs semiconductor slab-coupled optical waveguide laser; laser beam-quality measurements; near-field; nearly circular mode; nearly diffraction-limited; output beam; output powers; single-ended continuous-wave output power; Erbium-doped fiber lasers; Laser modes; Optical diffraction; Optical pumping; Optical waveguides; Pump lasers; Semiconductor lasers; Semiconductor waveguides; Vertical cavity surface emitting lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.813406
