Test results on double sided readout silicon strip detectors

Author

Batignani, G. ; Bosisio, L. ; Conti, A. ; Focardi, E. ; Forti, F. ; Giorgi, M.A. ; Grandi, M. ; Parrini, G. ; Tempesta, P. ; Tonelli, G. ; Triggiani, G.

Author_Institution

INFN, Pisa, Italy

Volume

36

Issue

1

fYear

1989

fDate

2/1/1989 12:00:00 AM

Firstpage

40

Lastpage

45

Abstract

Several 5×5 cm² double-sided readout silicon strip detectors have been fabricated using planar technology. Electrical characteristics (I-V and C-V curves interstrip resistance versus bias voltage) have been measured. Some detectors have been tested with a scanning electron microscope to investigate defects due to the fabrication process. A few of them have been tested with a β source and with a 50-GeV electron beam. A strong correlation is observed between charges collected on the ohmic side and on the junction side. Preliminary results on capacitive charge division studies are also presented

Keywords

electron detection and measurement; semiconductor counters; C-V curves; I-V; Si; bias voltage; capacitive charge division; double sided readout silicon strip detectors; interstrip resistance; Detectors; Electric resistance; Electric variables; Electric variables measurement; Electrical resistance measurement; Electrons; Silicon; Strips; Testing; Voltage measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.34398

Filename

34398