Title :
Back-side AlOx Passivation material and technology for the application of high efficiency (20%) and low cost PERC solar cells
Author :
Jui-Yi Hung ; Jung-Ching Wang ; Shian-Wen Chen ; Tsung-Cheng Chen ; Yung-Sheng Lin ; Chen-Hao Ku ; Ching-Chang Wen
Author_Institution :
NewE Mater. Co., Ltd., Kaohsiung, Taiwan
Abstract :
In this paper, we developed a novel and economic deposition technique for AlOx layer by applying our novel material - “AlOx Passivation Paste” (IP1257) using screen printing which is a standard process/equipment available in all cell manufacturers. As a result, capital investment in high cost equipment could be reduced. After process integration with commercially available screen-printed contact opening process, the highest conversion efficiency of 20.11% with VOC of 0.655 V and ISC of 9.30 A for standard Mono pseudo square wafers (156 mm) have been achieved. This could be attributed to an excellent rear side passivation quality by the IP1257-AlOx/SiNx stack. Finally, we believe that this technique could become a good solution and option for the next generation of high efficiency PERC-type solar cells.
Keywords :
aluminium compounds; investment; passivation; silicon compounds; solar cells; AlOx-SiNx; IP1257 stack; aluminium oxide passivation paste; back-side aluminium oxide passivation material; capital investment; cell manufacturers; conversion efficiency; current 9.30 A; economic deposition technique; efficiency 20 percent; efficiency 20.11 percent; high-efficiency PERC solar cells; low-cost PERC solar cells; process integration; rear side passivation quality; screen-printed contact opening process; standard Mono pseudo square wafers; standard process-equipment; voltage 0.655 V; Atomic layer deposition; Films; Passivation; Photovoltaic cells; Printing; Aluminum oxide; Passivation Paste; screen-printed;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925642
