• DocumentCode
    122293
  • Title

    Numerical analysis of injection level dependent effective lifetime on 125 mm undiffused lifetime samples

  • Author

    Fa-Jun Ma ; Hameiri, Ziv ; Samudra, Ganesh S. ; Peters, Martin ; Hoex, B.

  • Author_Institution
    Solar Energy Res. Inst. of Singapore, Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    3313
  • Lastpage
    3316
  • Abstract
    Effective minority carrier lifetime reduction at low injection levels is observed on 125 mm undiffused lifetime samples whose surfaces are under inversion due to field-effect passivation. With numerical analysis, we show that edge recombination is insufficient to account for this phenomenon on these samples. Between surface damage and asymmetric bulk lifetimes mechanisms that can account for the reduction, surface damage is confirmed to be more plausible. We demonstrate that the measured effective lifetime curves can be well reproduced assuming surface damage, a 700 nm thin layer with much lower bulk lifetimes, with numerical simulation.
  • Keywords
    minority carriers; numerical analysis; passivation; photovoltaic cells; asymmetric bulk lifetimes mechanisms; edge recombination; effective minority carrier lifetime reduction; field effect passivation; injection level dependent effective lifetime; low injection levels; size 125 mm; size 700 nm; surface damage; undiffused lifetime samples; Charge carrier processes; Physics; Radiative recombination; Semiconductor device modeling; Silicon; Substrates; effective lifetime reduction; inversion; photovoltaic cells; silicon; surface passivation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
  • Conference_Location
    Denver, CO
  • Type

    conf

  • DOI
    10.1109/PVSC.2014.6925643
  • Filename
    6925643