DocumentCode
122293
Title
Numerical analysis of injection level dependent effective lifetime on 125 mm undiffused lifetime samples
Author
Fa-Jun Ma ; Hameiri, Ziv ; Samudra, Ganesh S. ; Peters, Martin ; Hoex, B.
Author_Institution
Solar Energy Res. Inst. of Singapore, Nat. Univ. of Singapore, Singapore, Singapore
fYear
2014
fDate
8-13 June 2014
Firstpage
3313
Lastpage
3316
Abstract
Effective minority carrier lifetime reduction at low injection levels is observed on 125 mm undiffused lifetime samples whose surfaces are under inversion due to field-effect passivation. With numerical analysis, we show that edge recombination is insufficient to account for this phenomenon on these samples. Between surface damage and asymmetric bulk lifetimes mechanisms that can account for the reduction, surface damage is confirmed to be more plausible. We demonstrate that the measured effective lifetime curves can be well reproduced assuming surface damage, a 700 nm thin layer with much lower bulk lifetimes, with numerical simulation.
Keywords
minority carriers; numerical analysis; passivation; photovoltaic cells; asymmetric bulk lifetimes mechanisms; edge recombination; effective minority carrier lifetime reduction; field effect passivation; injection level dependent effective lifetime; low injection levels; size 125 mm; size 700 nm; surface damage; undiffused lifetime samples; Charge carrier processes; Physics; Radiative recombination; Semiconductor device modeling; Silicon; Substrates; effective lifetime reduction; inversion; photovoltaic cells; silicon; surface passivation;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location
Denver, CO
Type
conf
DOI
10.1109/PVSC.2014.6925643
Filename
6925643
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