Silicon-dioxide waveguides with low birefringence

Author

De Peralta, L. Grave ; Bernussi, Ayrton A. ; Temkin, H. ; Borhani, Marcus M. ; Doucette, David E.

Author_Institution

Nano Tech Center, Texas Tech Univ., Lubbock, TX, USA

Volume

39

Issue

7

fYear

2003

fDate

7/1/2003 12:00:00 AM

Firstpage

874

Lastpage

879

Abstract

We describe the use of highly boron-doped silicon dioxide for the preparation of optical waveguides with very low birefringence. Plasma-enhanced chemical vapor deposition was used to vary the boron content from 5 wt% to 10 wt%, at a constant phosphorus content of 4.8%. A transition from compressive to tensile stress was observed at a boron concentration of 9.1%. Pedestal-type waveguides formed with the high-boron top cladding layer show low loss of 0.02 dB/cm. Arrayed waveguide grating devices with a polarization-dependent wavelength shift of 0.01 nm and excellent stability have been demonstrated.

Keywords

arrayed waveguide gratings; boron; claddings; light polarisation; mechanical birefringence; optical fabrication; optical losses; optical waveguides; plasma CVD; silicon compounds; S; SiO₂:B,P; WDM; arrayed waveguide grating devices; boron content; compressive to tensile transition; constant phosphorus content; high-boron top cladding layer; highly boron-doped silicon dioxide; integrated optics; low birefringence; low loss; optical waveguides; pedestal-type waveguides; plasma-enhanced chemical vapor deposition; polarization-dependent wavelength shift; silicon-dioxide waveguides; stability; wavelength multiplexing devices; Arrayed waveguide gratings; Birefringence; Boron; Chemical vapor deposition; Optical waveguides; Plasma chemistry; Plasma waves; Polarization; Silicon compounds; Tensile stress;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2003.813194

Filename

1206830