Development of large area p-Si surface barrier detectors and the associated charge sensitive preamplifier

Author

Takami, Y. ; Shiraishi, F. ; Murakami, H. ; Sieminski, M. ; Isawa, N.

Author_Institution

Inst. for Atomic Energy, Rikkyo Univ., Yokosuka, Japan

Volume

36

Issue

1

fYear

1989

fDate

2/1/1989 12:00:00 AM

Firstpage

181

Lastpage

184

Abstract

Large-area Si surface barrier detectors (SDB), with 95 cm² sensitive area and a charge-sensitive preamplifier, for use up to 10⁵-pF input capacitance were developed. The noise width of the preamplifier had a slope of 7 eV/pF with respect to the input capacitance. The p-Si detectors were made of MCZ Si of 1.7-3.6-kΩ resistivity Si grown in an intense transverse magnetic field. The detector characteristics and the fabrication technique, including the surface treatment and passivation, are described in detail

Keywords

elemental semiconductors; passivation; preamplifiers; semiconductor counters; silicon; surface treatment; 1.7 to 3.6 kohm; 10⁵ pF; SDB; Si; charge sensitive preamplifier; detector characteristics; fabrication technique; large area p-Si surface barrier detectors; noise width; passivation; semiconductor detector; surface treatment; Acoustical engineering; Capacitance; Conductivity; Detectors; Fabrication; Magnetic fields; Magnetic noise; Passivation; Preamplifiers; Surface treatment;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.34430

Filename

34430