Title :
Evaluation of hafnium nitride and zirconium nitride as Hot Carrier absorber
Author :
Shrestha, Sanjeeb ; Chung, Shi-Uk ; Gupta, Neeraj ; Yu Feng ; Xiaoming Wen ; Hongze Xia ; Conibeer, G.
Author_Institution :
Sch. of Photovoltaic & Renewable Energy Eng., UNSW Australia, Sydney, NSW, Australia
Abstract :
The Hot Carrier (HC) solar cell aims to tackle a major loss in conventional solar cells by collecting the hot carriers before they thermalise. The calculated efficiency of the HC solar cell is very close to the limiting efficiency for an infinite tandem cell. The HC solar cell requires an absorber with a low electronic band gap so that it can absorb a large fraction of the solar spectrum. Importantly the absorber must sufficiently slow down the rate of carrier cooling so that adequate time is available to collect the hot carriers. In this work the main mechanisms of carrier cooling and possible approaches to restrict these mechanisms will be discussed. Hafnium nitride and zirconium nitride are presented as potential absorber materials for HC solar cells. Besides a large “phononic band gap” suitable to block the main carrier cooling mechanism, these materials have reasonable abundance to allow large scale implementation. Recent work on the fabrication of these materials at UNSW will also be presented.
Keywords :
cooling; hafnium compounds; hot carriers; photonic band gap; solar cells; zirconium compounds; HC solar cell; absorber materials; carrier cooling; hafnium nitride; hot carrier absorber; hot carriers; infinite tandem cell; low electronic band gap; phononic band gap; solar spectrum; zirconium nitride; Films; Hot carriers; Optical imaging; Phonons; Photonic band gap; Photovoltaic cells; carrier cooling; hafnium nitride; hot carrier absorber; hot carrier solar cells; photovoltaic cells; third generation photovoltaics; zirconium nitride;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925669