Title :
Electrical characteristics of epitaxially grown SrTiO3 on silicon for metal-insulator-semiconductor gate dielectric applications
Author :
Jeon, Sanghun ; Walker, Frederick J. ; Billman, Curtis A. ; McKee, Rodney A. ; Hwang, Hyunsang
Author_Institution :
Dept. of Mater. Sci. & Eng., Kwangju Inst. of Sci. & Technol., Gwangju, South Korea
fDate :
4/1/2003 12:00:00 AM
Abstract :
We have found excellent electrical characteristics of epitaxially grown SrTiO/sub 3/ by molecular beam epitaxy (MBE) for silicon metal-insulator-semiconductor (MIS) gate dielectric application. For thin SrTiO/sub 3/ film, the equivalent oxide thickness (EOT) and leakage current density was 5.4 /spl Aring/ and 7 /spl times/ 10/sup -4/ A/cm/sup 2/ (@V/sub g/ = V/sub fb/ - 1 V), respectively. In addition, the dispersion and hysteresis characteristics were negligible. As-deposited samples show relatively high fixed oxide charge density and interface state density, but both of these characteristics are substantially reduced by an optimizing low temperature (< 450 /spl deg/C) post-metal forming gas anneal (FGA).
Keywords :
MIS structures; annealing; dielectric thin films; interface states; leakage currents; molecular beam epitaxial growth; strontium compounds; 450 degC; SrTiO/sub 3/ thin film; SrTiO/sub 3/-Si; crystalline oxide; dispersion characteristics; electrical characteristics; epitaxial growth; equivalent oxide thickness; fixed oxide charge density; forming gas annealing; high-/spl kappa/ material; hysteresis characteristics; interface state density; leakage current density; metal-insulator-semiconductor gate dielectric; molecular beam epitaxy; silicon substrate; Annealing; Dielectric thin films; Electric variables; Hysteresis; Interface states; Leakage current; Metal-insulator structures; Molecular beam epitaxial growth; Silicon; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.810886
