Title :
A double-sided silicon strip detector with capacitive readout and a new method of integrated bias coupling
Author :
Holl, P. ; Kemmer, J. ; Prechtel, Ulrich ; Hauff, D. ; Lutz, G. ; Schwarz, Andreas
Author_Institution :
Messerschmitt Bolkow Blohm GmbH, Munchen
fDate :
2/1/1989 12:00:00 AM
Abstract :
A novel biasing concept made it possible to implement capacitive coupling in a double-sided silicon strip detector system with a relatively simple production process. Capacitive coupling eliminates the problem of electronic readout saturation caused by leaky strips. This advantage is of particular value for the n-side, where a current caused by differences in the input voltage levels of the readout electronics could make any measurements impossible. Double-sided readout increases the position information and is advantageous for use in detector systems where compactness and minimization of scattering material are important. Static measurements have confirmed all the principal performance properties of the device. Further tests were performed in the readout electronics environment of the ALEPH minivertex detector under laboratory and operating conditions in a test beam at the CERN SPS and have confirmed the detector´s performance
Keywords :
elemental semiconductors; nuclear electronics; semiconductor counters; silicon; ALEPH minivertex detector; CERN SPS; capacitive readout; double sided Si strip detector; electronic readout saturation; input voltage levels; integrated bias coupling; leaky strips; operating conditions; performance properties; position information; semiconductor counter; static measurements; test beam; Current measurement; Detectors; Electronic equipment testing; Particle measurements; Production systems; Readout electronics; Scattering; Silicon; Strips; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on