DocumentCode :
122323
Title :
ALD grown absorber materials for bulk heterojunction solar cells
Author :
Mahuli, Neha ; Sarkar, Subir Kumar
Author_Institution :
Dept. of Energy Sci. & Eng., Indian Inst. of Technol. Bombay, Powai, India
fYear :
2014
fDate :
8-13 June 2014
Abstract :
In this report we have discussed the need of conformal deposition of the low bandgap materials as absorber in solid-state bulk heterojunction devices. We demonstrated ALD grown Sb2S3 and TiSx thin films for photovoltaic applications. The deposition mechanism was studied in depth using in-situ quartz crystal microbalance (QCM). Need of modified reactor configuration for the uniform deposition of the material throughout the depth of the mesoporous host was discussed with elaborated comparative results for various absorber material device configurations.
Keywords :
antimony compounds; atomic layer deposition; quartz crystal microbalances; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; solar cells; titanium compounds; ALD grown absorber materials; QCM; Sb2S3; TiSx; absorber material device configurations; bulk heterojunction solar cells; conformal deposition; deposition mechanism; depth; in-situ quartz crystal microbalance; low bandgap materials; modified reactor configuration; photovoltaic applications; solid-state bulk heterojunction devices; thin films; Atomic layer deposition; Heterojunctions; Materials; Metals; Photovoltaic cells; Photovoltaic systems; Antimony Sulfide; Atomic Layer Deposition (ALD); In-situ growth; Solid-state bulk heterojunction solar cells; Tin sulfide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
Type :
conf
DOI :
10.1109/PVSC.2014.6925673
Filename :
6925673
Link To Document :
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