DocumentCode :
122330
Title :
Quantitative local current-voltage analysis with different spatially-resolved camera based techniques of silicon solar cells with cracks
Author :
Pletzer, Tobias M. ; van Molken, Justus I. ; Rissland, Sven ; Hallam, Brett ; Cornagliotti, Emanuele ; John, Jomy ; Breitenstein, O. ; Knoch, J.
Author_Institution :
Inst. of Semicond. Electron., RWTH Aachen Univ., Aachen, Germany
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
3473
Lastpage :
3478
Abstract :
The ongoing trend to decrease the wafer thickness in the fabrication of silicon solar cells increases the number of possible cracks. Therefore, an in-depth understanding of the influence of cracks on solar cells is necessary. In this work, we investigate silicon solar cells with cracks by employing three camera-based spatially-resolved techniques and use the data to quantitatively calculate local-current voltage parameters. Cracks mainly influence the recombination current density of a silicon solar cell. This fact is clearly shown by drastically increased recombination in the space charge region. This recombination reduces parameters like fill factor, open circuit voltage and the cell efficiency. The comparison of the solar cell data before and after the formation of cracks shows a 0.2 % absolute efficiency loss in the global current-voltage parameters and up to 1 % absolute efficiency loss in the local current-voltage analysis at the crack positions.
Keywords :
cameras; cracks; electron-hole recombination; elemental semiconductors; silicon; solar cells; Si; cell efficiency; fill factor; open circuit voltage; quantitative local current-voltage analysis; recombination current density; silicon solar cells; solar cell cracks; solar cell fabrication; space charge region; spatially resolved camera; wafer thickness; Current measurement; Mechanical variables measurement; Photovoltaic cells; Radiative recombination; Semiconductor device measurement; Thyristors; Voltage measurement; cracks; electro; local current-voltage parameters; photoluminescence; silicon solar cells; thermography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
Type :
conf
DOI :
10.1109/PVSC.2014.6925680
Filename :
6925680
Link To Document :
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