Substrate bias dependence of breakdown progression in ultrathin oxide pMOSFETs

Author

Tsai, C.W. ; Chen, M.C. ; Gu, S.H. ; Wang, Tahui

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

24

Issue

4

fYear

2003

fDate

4/1/2003 12:00:00 AM

Firstpage

269

Lastpage

271

Abstract

Negative substrate bias-enhanced oxide breakdown (BD) progression in ultrathin oxide (1.4 nm) pMOS is observed. The enhanced progression is attributed to the increase of hole-stress current resulting from BD-induced, channel-carrier heating. The carrier temperature extracted from the spectral distribution of hot-carrier luminescence is around 1300 K. The substrate bias dependence of post-BD hole-tunneling current is confirmed from measurement and calculation. The observed phenomenon is particularly significant to ultrathin gate oxide reliability in floating substrate (SOI) and forward-biased substrate devices.

Keywords

MOSFET; electroluminescence; hot carriers; semiconductor device breakdown; semiconductor device reliability; silicon-on-insulator; tunnelling; 1.4 nm; breakdown progression; carrier temperature; channel-carrier heating; floating substrate devices; forward-biased substrate devices; hole-stress current; hole-tunneling current; hot-carrier luminescence spectral distribution; negative substrate bias-enhanced oxide breakdown; substrate bias dependence; ultrathin gate oxide reliability; ultrathin oxide pMOSFETs; Charge carrier processes; Circuits; Current measurement; Electric breakdown; Heating; MOSFETs; Stress; Temperature dependence; Temperature distribution; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.810890

Filename

1206860