Title :
Low-noise voltage-sensitive preamplifier operated in the Kelvin range for cryogenic detectors
Author :
Alessandrello, A. ; Camin, D.V. ; Giuliani, A.
Author_Institution :
Dipartimento di Fisica, Milan Univ., Italy
fDate :
2/1/1989 12:00:00 AM
Abstract :
Low-l/f-noise GaAs MESFETs (metal-semiconductor field-effect transistors) were used to develop a preamplifier for cryogenic detectors. It operates at 1 K, has a voltage gain of 50, a bandwidth of 8 MHz and a noise level of 1.3 nV/√Hz at 100 kHz. It is used to amplify the signal of bolometric detectors, avoiding microphonics and RFI (radio-frequency interference) energy pick-up which heats the detector. It can also be used for risetime studies on fast detectors
Keywords :
III-V semiconductors; cryogenics; field effect integrated circuits; gallium arsenide; nuclear electronics; preamplifiers; 1 K; 8 MHz; GaAs; MESFETs; RFI; bolometric detectors; cryogenic detectors; energy pick-up; fast detectors; metal-semiconductor field-effect transistors; microphonics; preamplifier; radio-frequency interference; risetime studies; Bandwidth; Cryogenics; Detectors; FETs; Gallium arsenide; Kelvin; MESFETs; Preamplifiers; Radiofrequency interference; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
