High-performance strained-SOI CMOS devices using thin film SiGe-on-insulator technology

Author

Mizuno, Tomohisa ; Sugiyama, Naoharu ; Tezuka, Tsutomu ; Numata, Toshinori ; Takagi, Shin-ichi

Author_Institution

Assoc. of Super-Advanced Electron. Technol., MIRAI Project, Kawasaki, Japan

Volume

50

Issue

4

fYear

2003

fDate

4/1/2003 12:00:00 AM

Firstpage

988

Lastpage

994

Abstract

We have developed high-performance strained-SOI CMOS devices on thin film relaxed SiGe-on-insulator (SGOI) substrates with high Ge content (25%) fabricated by the combination of separation-by-implanted-oxygen (SIMOX) and internal-thermal-oxidation (ITOX) techniques without using SiGe buffer structures. The maximum enhancement of electron and hole mobilities of strained-SOI devices against the universal mobility amounts to 85 and 53%, respectively. On the other hand, we have also observed the reduction of carrier mobility in a thinner strained-Si layer or at higher vertical electric field conditions. For the first time, we have demonstrated a high-speed CMOS ring-oscillator using strained-SOI devices, and its improvement amounts to 63% at the supply voltage of 1.5 V, compared to control-SOI CMOS.

Keywords

CMOS digital integrated circuits; Ge-Si alloys; SIMOX; carrier mobility; ion implantation; semiconductor materials; 1.5 V; CMOS ring-oscillator; SIMOX; SiGe; electron mobilities; hole mobilities; internal-thermal-oxidation techniques; separation-by-implanted-oxygen; strained-SOI CMOS devices; supply voltage; thin film SiGe-on-insulator technology; vertical electric field conditions; Annealing; CMOS technology; Charge carrier processes; Electron mobility; Germanium silicon alloys; MOSFETs; Silicon germanium; Strain control; Substrates; Thin film devices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.812149

Filename

1206882