Nickel induced crystallization of α-Si gate electrode at 500°C and MOS capacitor reliability

Author

Joshi, Amol R. ; Saraswat, Krishna C.

Author_Institution

Dept. of Electr. Eng., Stanford Univ., CA, USA

Volume

50

Issue

4

fYear

2003

fDate

4/1/2003 12:00:00 AM

Firstpage

1058

Lastpage

1062

Abstract

We present a study of MOS capacitor reliability when nickel (Ni) is used to crystallize a phosphorus-doped, amorphous silicon (α-Si)-gate electrode by metal-induced crystallization (MIC). The dopant in the gate electrode was also activated during the MIC. We report that there was an increase of about 0.1 eV in the gate electrode workfunction due to Ni. Through capacitance-voltage ( C-V), current-voltage (I-V) and charge-to-breakdown (Q_BD) measurements, we show that the Ni MIC in the gate electrode does not degrade the MOS capacitor reliability.

Keywords

MOS capacitors; amorphous semiconductors; crystallisation; elemental semiconductors; nickel; semiconductor device reliability; silicon; work function; 500 degC; MOS capacitor reliability; Ni; Si:P; capacitance-voltage characteristics; charge-to-breakdown; current-voltage characteristics; dopant activation; metal-induced crystallization; phosphorus-doped amorphous silicon gate electrode; work function; Amorphous silicon; Capacitance measurement; Capacitance-voltage characteristics; Crystallization; Current measurement; Electrodes; MOS capacitors; Microwave integrated circuits; Nickel; Q measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.812496

Filename

1206892