Title :
Nickel induced crystallization of α-Si gate electrode at 500°C and MOS capacitor reliability
Author :
Joshi, Amol R. ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA, USA
fDate :
4/1/2003 12:00:00 AM
Abstract :
We present a study of MOS capacitor reliability when nickel (Ni) is used to crystallize a phosphorus-doped, amorphous silicon (α-Si)-gate electrode by metal-induced crystallization (MIC). The dopant in the gate electrode was also activated during the MIC. We report that there was an increase of about 0.1 eV in the gate electrode workfunction due to Ni. Through capacitance-voltage ( C-V), current-voltage (I-V) and charge-to-breakdown (QBD) measurements, we show that the Ni MIC in the gate electrode does not degrade the MOS capacitor reliability.
Keywords :
MOS capacitors; amorphous semiconductors; crystallisation; elemental semiconductors; nickel; semiconductor device reliability; silicon; work function; 500 degC; MOS capacitor reliability; Ni; Si:P; capacitance-voltage characteristics; charge-to-breakdown; current-voltage characteristics; dopant activation; metal-induced crystallization; phosphorus-doped amorphous silicon gate electrode; work function; Amorphous silicon; Capacitance measurement; Capacitance-voltage characteristics; Crystallization; Current measurement; Electrodes; MOS capacitors; Microwave integrated circuits; Nickel; Q measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.812496
