DocumentCode :
1223730
Title :
Shot-noise reduction in multiple-quantum-well resonant tunneling diodes
Author :
Pouyet, Vincent ; Brown, Elliott R.
Author_Institution :
Electr. Eng. Dept., Univ. of California, Los Angeles, CA, USA
Volume :
50
Issue :
4
fYear :
2003
fDate :
4/1/2003 12:00:00 AM
Firstpage :
1063
Lastpage :
1068
Abstract :
This paper develops formalism for computing the shot noise in resonant-tunneling structures having an arbitrary number of quantum wells (QWs). It is based on the electrostatic feedback effect in QW structures and is the first known shot-noise formalism that treats the electrostatic and quantum effects in a self-consistent fashion. A significant drop in the shot-noise factor is predicted with increasing QW number in graded structures. The minimum room-temperature shot-noise factor predicted by this work is 0.24 in a triple-well structure.
Keywords :
quantum well devices; resonant tunnelling diodes; semiconductor device noise; shot noise; electrostatic feedback; graded structure; multiple-quantum-well resonant tunneling diode; shot noise; Acoustical engineering; Circuit noise; Electrons; Electrostatics; Quantum computing; Quantum well devices; Resonant tunneling devices; Semiconductor device noise; Semiconductor diodes; Thermal resistance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2003.811414
Filename :
1206893
Link To Document :
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