Title :
CF4 decomposition using inductively coupled plasma: effect of power frequency
Author :
Kuroki, Tomoyuki ; Mine, Junko ; Okubo, Masaaki ; Yamamoto, Toshiaki ; Saeki, Noboru
Author_Institution :
Dept. of Energy Syst. Eng., Osaka Prefecture Univ., Sakai, Japan
Abstract :
The performance evaluation of CF4 decomposition efficiency using 2- and 4-MHz power supplies was carried out as a function of the power, the pressure, the flow rate, and the quantity of O2 addition. When the 2- and 4-MHz power supplies were used, almost complete CF4 removal was achieved at 2.0 and 3.0 kW, respectively, when the CF4 flow rate was 0.20 normal liters per minute. The optimum O2/CF4 ratio should be in the range of 1.0∼1.25 in order to decompose CF4 efficiently. The CF4 decomposition efficiency using the 2-MHz power supply was significantly higher than that of the 4-MHz power supply under the same power, pressure, and flow rate. Significant amounts of byproducts such as COF2 and CO were identified by the Fourier transform infrared spectrophotometer analysis in addition to CO2.
Keywords :
Fourier transforms; decomposition; environmental factors; infrared spectrometers; plasma CVD; plasma devices; power supplies to apparatus; spectrophotometers; 2 to 4 MHz; CF4; CF4 decomposition; Fourier transform infrared spectrophotometer analysis; inductively coupled plasma; perfluorocompounds; power frequency; power supply; Atmospheric-pressure plasmas; Chemical vapor deposition; Etching; Frequency; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma stability; Plasma temperature; Power supplies;
Journal_Title :
Industry Applications, IEEE Transactions on
DOI :
10.1109/TIA.2004.840948
