DocumentCode :
1224352
Title :
The dielectric properties of Ba0.6Sr0.4CrxTi1-xO3 thin films prepared by pulsed laser deposition
Author :
Yu, Shengwen ; Cheng, Jinrong ; Li, Ruxing ; Zhu, Weicheng ; Meng, Zhongyan
Author_Institution :
Sch. of Mater. Sci. & Eng., Shanghai Univ., Shanghai
Volume :
55
Issue :
5
fYear :
2008
fDate :
5/1/2008 12:00:00 AM
Firstpage :
1029
Lastpage :
1033
Abstract :
Ba0.6Sr0.4CrxTi1-xO3 (BSCT) films were prepared by pulsed laser deposition with the value of x varying from 0 mol% to 2.0 mol%. X-ray diffraction analysis detected an increase in the lattice parameters, which could be due to the characteristics of the growth process. Dielectric properties and tunability of the BSCT films were measured. The dissipation factors of the films decreased with increasing Cr-concentration. The highest figure of merit (FOM) value of 33.3 was obtained in 1.0 mol%-doped BSCT film. As a result, the effect of Cr doping is positive.
Keywords :
X-ray diffraction; barium compounds; chromium; dielectric thin films; lattice constants; permittivity; pulsed laser deposition; strontium compounds; Bao.6Sr0.4CrxTi1-xO3; Cr doping; FOM; X-ray diffraction analysis; dielectric constant; dielectric properties; dissipation factors; figure of merit; growth process; lattice parameters; pulsed laser deposition; thin films; Ceramics; Crystallization; Electric Impedance; Lasers; Materials Testing; Membranes, Artificial;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2008.750
Filename :
4524978
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1224352
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