DocumentCode
1224352
Title
The dielectric properties of Ba0.6Sr0.4CrxTi1-xO3 thin films prepared by pulsed laser deposition
Author
Yu, Shengwen ; Cheng, Jinrong ; Li, Ruxing ; Zhu, Weicheng ; Meng, Zhongyan
Author_Institution
Sch. of Mater. Sci. & Eng., Shanghai Univ., Shanghai
Volume
55
Issue
5
fYear
2008
fDate
5/1/2008 12:00:00 AM
Firstpage
1029
Lastpage
1033
Abstract
Ba0.6Sr0.4CrxTi1-xO3 (BSCT) films were prepared by pulsed laser deposition with the value of x varying from 0 mol% to 2.0 mol%. X-ray diffraction analysis detected an increase in the lattice parameters, which could be due to the characteristics of the growth process. Dielectric properties and tunability of the BSCT films were measured. The dissipation factors of the films decreased with increasing Cr-concentration. The highest figure of merit (FOM) value of 33.3 was obtained in 1.0 mol%-doped BSCT film. As a result, the effect of Cr doping is positive.
Keywords
X-ray diffraction; barium compounds; chromium; dielectric thin films; lattice constants; permittivity; pulsed laser deposition; strontium compounds; Bao.6Sr0.4CrxTi1-xO3; Cr doping; FOM; X-ray diffraction analysis; dielectric constant; dielectric properties; dissipation factors; figure of merit; growth process; lattice parameters; pulsed laser deposition; thin films; Ceramics; Crystallization; Electric Impedance; Lasers; Materials Testing; Membranes, Artificial;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/TUFFC.2008.750
Filename
4524978
Link To Document