• DocumentCode
    1224417
  • Title

    Effect of electric field and temperature on hole mobility in Alq3 material

  • Author

    Singh, S.P. ; Gupta, VL

  • Author_Institution
    Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
  • Volume
    39
  • Issue
    11
  • fYear
    2003
  • fDate
    5/29/2003 12:00:00 AM
  • Firstpage
    862
  • Lastpage
    863
  • Abstract
    The current-voltage characteristics of an Alq3-based hole-only device (ITO/Alq3/Au) are measured against temperature. As the hole current is space-charge limited, the hole mobility μp against electric field and temperature was measured directly. The hole mobility exhibits a field dependence as observed for other disordered materials such as amorphous glasses.
  • Keywords
    current density; electric field effects; electroluminescence; hole mobility; organic light emitting diodes; organic semiconductors; semiconductor thin films; space-charge-limited conduction; 8-hydroxyquinoline aluminium; Alq3-based hole-only device; Au; I-V characteristics; ITO; ITO/Alq3/Au structure; InSnO; OLEDs; current voltage characteristics; electric field effect; field dependent mobility; hole mobility; organic LED; organic heterojunction; space-charge limited hole current; temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030520
  • Filename
    1207239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1224417