Effect of drain-to-source spacing of AlGaN/GaN transistor on frequency response and breakdown characteristics

A report is presented on the effect of the distance between source and drain of an AlGaN/GaN heterostructure field-effect transistor on the frequency response. Comparison of devices with different drain-to-source spacing has been performed. The intrinsic parameters have been extracted by means of parasitic parameter extraction. The influence of the source and drain resistances on the short circuit unity current gain was investigated. The trade-off between lower breakdown voltage, due to smaller drain-to-source spacing, and higher cutoff frequency has been addressed.