DocumentCode
1224499
Title
Investigations of low-frequency noise of GaN-based heterostructure field-effect transistors
Author
Wei, S.C. ; Su, Y.K. ; Kuan, T.M. ; Wang, R.-L. ; Chang, S.J. ; Ko, C.H. ; Webb, J.B. ; Bardwell, J.A.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan City, Taiwan
Volume
39
Issue
11
fYear
2003
fDate
5/29/2003 12:00:00 AM
Firstpage
877
Lastpage
878
Abstract
The low-frequency noise of AlGaN/GaN heterojunction field-effect transistors (HFETs) with different Al fraction of the AlGaN layer was measured and characterised. The DC characteristics of AlGaN/GaN HFETs with higher Al fraction is better. However, the noise performance is poorer owing to the large lattice mismatch with higher Al fraction in the AlGaN layer. The pure flicker noise and lower noise power density can be obtained by the smaller Al fraction in the AlGaN layer of AlGaN/GaN HFETs.
Keywords
III-V semiconductors; aluminium compounds; field effect transistors; flicker noise; gallium compounds; semiconductor device noise; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN; DC characteristics; heterostructure field-effect transistors; lattice mismatch; low-frequency noise; noise performance; noise power density; pure flicker noise;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030548
Filename
1207249
Link To Document