DocumentCode :
1224628
Title :
Continuous-Wave Electrically Pumped 1.55- 
m Edge-Emitting Platelet Ridge Laser Diodes on Silicon
Author :
Rumpler, Joseph J. ; Fonstad, Clifton G., Jr.
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA
Volume :
21
Issue :
13
fYear :
2009
fDate :
7/1/2009 12:00:00 AM
Firstpage :
827
Lastpage :
829
Abstract :
We report the successful integration on silicon of small footprint, low-threshold electrically pumped edge-emitting lasers by a new approach incorporating microcleaving technology to produce 6-mum-thick platelet lasers with cleaved facets, microscale pick and place assembly to position them on the substrate, and diaphragm pressure solder bonding to attach/connect them permanently in place. InP-based ridge-waveguide platelet lasers integrated on silicon lase at 1550-nm continuous-wave to 55degC (pulsed to 80degC) with output powers as high as 26.8 mW, external differential quantum efficiencies as high as 81%, and threshold currents as low as 18 mA.
Keywords :
III-V semiconductors; elemental semiconductors; indium compounds; integrated optics; laser beams; optical fabrication; ridge waveguides; semiconductor lasers; silicon; waveguide lasers; InP; Si; cleaved facets; continuous wave electrically pumped edge-emitting laser; current 18 mA; diaphragm pressure solder bonding; differential quantum efficiency; efficiency 81 percent; microcleaving technology; power 26.8 mW; ridge-waveguide platelet laser diodes; silicon base; size 6 mum; wavelength 1550 nm; Fabrication; indium compounds; integrated optoelectronics; laser cavity resonators; ridge waveguides; semiconductor lasers; silicon;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2019261
Filename :
4810146
Link To Document :
