DocumentCode :
1224954
Title :
Enhanced Brightness of Tapered Laser Diodes Based on an Asymmetric Epitaxial Design
Author :
Tijero, J.M.G. ; Odriozola, H. ; Borruel, L. ; Esquivias, I. ; Sujecki, S. ; Larkins, E.C.
Author_Institution :
Univ. Politecnica de Madrid, Madrid
Volume :
19
Issue :
20
fYear :
2007
Firstpage :
1640
Lastpage :
1642
Abstract :
A significant enhancement of the brightness is predicted in tapered lasers with the active layer asymmetrically located in the optical cavity. The balance between the reduced tendency to beam filamentation, the increase of threshold current, and the decrease of secondary mode discrimination is analyzed using numerical simulations. An optimized design for a 975-nm tapered laser is proposed.
Keywords :
laser beams; laser cavity resonators; laser theory; numerical analysis; quantum well lasers; asymmetric epitaxial design; beam filamentation; enhanced brightness; laser active layer; laser simulation; numerical simulations; optical cavity; quantum-well laser; secondary mode discrimination; tapered laser diodes; wavelength 975 nm; Brightness; Diode lasers; Geometrical optics; Laser beams; Laser modes; Nonlinear optics; Optical design; Power generation; Semiconductor lasers; Waveguide lasers; High brightness; laser simulation; quantum-well (QW) laser; tapered lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2007.905083
Filename :
4317648
Link To Document :
بازگشت