Title :
NMOS Compatible Work Function of TaN Metal Gate With Erbium-Oxide-Doped Hafnium Oxide Gate Dielectric
Author :
Chen, Jingde ; Wang, X.P. ; Li, Ming-Fu ; Lee, S.J. ; Yu, M.B. ; Shen, C. ; Yeo, Yee-Chia
Author_Institution :
Nat. Univ. of Singapore, Singapore
Abstract :
This letter demonstrates reduction in effective work function of tantalum-nitride (TaN) metal gate with erbium-oxide-doped hafnium oxide. We report that TaN effective metal-gate work function can be tuned from Si midgap to the conduction band to meet the work-function requirement of NMOSFETs by incorporating ErO in HfO2 with an equivalent oxide thickness as low as 1.15 nm. Several other lanthanide-oxide doped hafnium oxides show similar characteristics.
Keywords :
MOSFET; erbium compounds; hafnium compounds; hydrogen compounds; tantalum compounds; work function; ErO; HfO2; NMOSFET; TaN - Binary; erbium-oxide-doped hafnium oxide gate dielectric; lanthanide-oxide doped hafnium oxides; tan metal gate; tantalum-nitride metal gate; Annealing; Dielectrics; Erbium; Hafnium oxide; Laboratories; MOS capacitors; MOS devices; MOSFETs; Microelectronics; Silicon; Erbium; MOS capacitor; high-$kappa$ dielectric; lanthanide; metal gate; rare earth metal;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.904210
