Title :
Failure mode analysis of oxide VCSELs in high humidity and high temperature
Author :
Xie, Suning ; Herrick, Robert W. ; Chamberlin, Danielle ; Rosner, S.J. ; McHugo, Scott ; Girolami, Grant ; Mayonte, Myrna ; Kim, Seongsin ; Widjaja, Wilson
Author_Institution :
Fiber Opt. Products Div., Agilent Technol., San Jose, CA, USA
fDate :
4/1/2003 12:00:00 AM
Abstract :
High-speed fiber-optic transceiver modules using parallel optics require that oxide-confined vertical-cavity surface-emitting lasers (VCSELs) be moisture resistant in a non-hermetic package. We have found that the conventional storage 85/85 (85°C/85% relative humidity) test does not adequately characterize oxide VCSELs moisture resistance. We have identified three failure modes in the oxide VCSELs under operating conditions in high humidity. In this paper, we discuss the failure mechanisms including dislocation growth, semiconductor cracks, and aperture surface degradation, all associated with operation under high relative humidity. Understanding of these failure modes has led to more appropriate qualification standards and environmentally robust oxide VCSELs.
Keywords :
cracks; dislocation density; distributed Bragg reflector lasers; environmental degradation; failure analysis; high-temperature electronics; humidity; moisture; optical transmitters; quantum well lasers; semiconductor device packaging; semiconductor device reliability; surface emitting lasers; transceivers; 85 degC; 850 nm; aperture surface degradation; conventional storage; dislocation growth; environmentally robust oxide VCSEL; failure mode analysis; high relative humidity; high temperature; high-speed fiber-optic transceiver modules; moisture resistance; nonhermetic package; operating conditions; oxide VCSEL; oxide-confined VCSEL; parallel optics; qualification standards; semiconductor cracks; Failure analysis; Fiber lasers; High speed optical techniques; Humidity; Moisture; Optical fiber testing; Surface resistance; Temperature; Transceivers; Vertical cavity surface emitting lasers;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2003.809546