Title :
On the Origin of the Excess Low-Frequency Noise in Graded-Channel Silicon-on-Insulator nMOSFETs
Author :
Simoen, Eddy ; Claeys, C. ; Chung, T.M. ; Flandre, D. ; Raskin, J.P.
Author_Institution :
Interuniv. Microelectron. Centre, Leuven
Abstract :
The origin of the low-frequency noise in graded- channel silicon-on-insulator nMOSFET is studied as a function of the back-gate bias at a low drain-to-source bias. It is shown that an excess noise peak that is correlated with the peak in the transconductance can be observed. This excess noise is due to a generation-recombination component in the low-frequency range, which is suppressed when the back gate is in accumulation mode.
Keywords :
MOSFET; semiconductor device noise; silicon-on-insulator; back-gate bias; drain-to-source bias; graded-channel silicon-on-insulator; low-frequency noise; nMOSFET; Doping; Laboratories; Low-frequency noise; MOSFETs; Microelectronics; Noise generators; Scattering; Silicon on insulator technology; Thermal resistance; Transconductance; Fully depleted (FD) silicon-on-insulator (SOI); graded-channel (GC) transistors; low-frequency (LF) noise;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.905958
