• DocumentCode
    1225191
  • Title

    On the Origin of the Excess Low-Frequency Noise in Graded-Channel Silicon-on-Insulator nMOSFETs

  • Author

    Simoen, Eddy ; Claeys, C. ; Chung, T.M. ; Flandre, D. ; Raskin, J.P.

  • Author_Institution
    Interuniv. Microelectron. Centre, Leuven
  • Volume
    28
  • Issue
    10
  • fYear
    2007
  • Firstpage
    919
  • Lastpage
    921
  • Abstract
    The origin of the low-frequency noise in graded- channel silicon-on-insulator nMOSFET is studied as a function of the back-gate bias at a low drain-to-source bias. It is shown that an excess noise peak that is correlated with the peak in the transconductance can be observed. This excess noise is due to a generation-recombination component in the low-frequency range, which is suppressed when the back gate is in accumulation mode.
  • Keywords
    MOSFET; semiconductor device noise; silicon-on-insulator; back-gate bias; drain-to-source bias; graded-channel silicon-on-insulator; low-frequency noise; nMOSFET; Doping; Laboratories; Low-frequency noise; MOSFETs; Microelectronics; Noise generators; Scattering; Silicon on insulator technology; Thermal resistance; Transconductance; Fully depleted (FD) silicon-on-insulator (SOI); graded-channel (GC) transistors; low-frequency (LF) noise;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2007.905958
  • Filename
    4317676
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1225191