Title :
High-power CW operation of AlGaInP laser-diode array at 640 nm
Author :
Skidmore, J.A. ; Emanuel, M.A. ; Beach, R.J. ; Benett, W.J. ; Freitas, B.L. ; Carlson, N.W. ; Solarz, R.W. ; Bour, D.P. ; Treat, D.W.
Author_Institution :
Lawrence Livermore Nat. Lab., CA, USA
Abstract :
Visible-emitting high-power laser bars are investigated at an emission wavelength of 640 nm. AlGaInP/GaInP, single tensile-strained quantum well, separate confinement heterostructures are fabricated into one cm long laser bars using a 0.7 fill factor. The low threshold current of the diode, combined with the aggressive heatsinking of a silicon microchannel cooler has resulted in more than 12 W of continuous wave output power.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; 12 W; 640 nm; AlGaInP; AlGaInP laser-diode array; GaInP; aggressive heatsinking; continuous wave output power; emission wavelength; fill factor; high-power CW operation; low threshold current; separate confinement heterostructures; silicon microchannel cooler; single tensile-strained quantum well; visible-emitting high-power laser bars; Bars; Diodes; Microchannel; Optical arrays; Potential well; Quantum well lasers; Semiconductor laser arrays; Silicon; Threshold current; Trigeneration;
Journal_Title :
Photonics Technology Letters, IEEE
