DocumentCode
1225263
Title
Measurements of reverse and forward bias absorption and gain spectra in semiconductor laser material
Author
McDougall, S.D. ; Ironside, C.N.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume
31
Issue
25
fYear
1995
fDate
12/7/1995 12:00:00 AM
Firstpage
2179
Lastpage
2181
Abstract
A simple technique for measuring absorption and gain spectra under reverse and forward bias in a two section semiconductor laser is described. Results are presented for an AlGaAs/GaAs multiquantum well laser. For reverse bias, exciton broadening and shifting are observed; and for forward bias, relative gain spectra are measured
Keywords
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; laser variables measurement; quantum well lasers; AlGaAs-GaAs; AlGaAs/GaAs multiquantum well laser; absorption spectra; exciton broadening; exciton shifting; forward bias; gain spectra; reverse bias; two section semiconductor laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19951483
Filename
481032
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