DocumentCode :
1225269
Title :
CMOS Camera With In-Pixel Temporal Change Detection and ADC
Author :
Chi, Yu M. ; Mallik, Udayan ; Clapp, Matthew A. ; Choi, Edward ; Cauwenberghs, Gert ; Etienne-Cummings, Ralph
Author_Institution :
California-San Diego Univ., La Jolla
Volume :
42
Issue :
10
fYear :
2007
Firstpage :
2187
Lastpage :
2196
Abstract :
An array of 90times90 active pixel sensors (APS) with pixel-level embedded differencing and comparison is presented. The nMOS-only 6T 2C 25 mum times 25 mum pixel provides both analog readout of pixel intensity and a digital flag indicating temporal change at variable thresholds. Computation is performed through a pixel-level capacitively coupled comparator which also functions as analog-to-digital converter. The chip, fabricated in a 0.5 mum 3M2P CMOS, process consumes 4.2 mW of power while operating at 30 fps. Change sensitivity is 2.1% at an illumination of 1.7 W/cm2. Gating of raster-scanned pixel output by change detection typically produces a 20-fold compression in the data stream, depending on image conditions and reconstruction quality set by the change detection threshold.
Keywords :
CMOS image sensors; analogue-digital conversion; cameras; comparators (circuits); data compression; image reconstruction; ADC; CMOS camera; active pixel sensor; analog-to-digital converter; image condition; image reconstruction quality; in-pixel temporal change detection; size 0.5 mum; Analog-digital conversion; CMOS image sensors; CMOS process; Cameras; Image coding; Image reconstruction; Lighting; Pixel; Sensor arrays; Streaming media; CMOS image sensor; computation-on-readout (COR); delta-difference sampling (DDS); pixel-level analog-to-digital conversion (ADC); temporal difference imager;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2007.905295
Filename :
4317686
Link To Document :
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