Title :
Submilliamp threshold 1.3 μm strained MQW lasers with novel p-substrate buried-heterostructure grown by MOVPE using TBA and TBP
Author :
Terakado, T. ; Tsuruoka, K. ; Ishida, T. ; Nakamura, T. ; Fukushima, K. ; Ae, S. ; Uda, A. ; Torikai, T. ; Uji, T.
Author_Institution :
Kansai Electron. Res. Lab., NEC Corp., Otsu, Japan
fDate :
12/7/1995 12:00:00 AM
Abstract :
An extremely low 0.4 mA threshold current has been achieved for novel current-blocking 1.3 μm strained MQW laser diodes. These devices are grown by MOVPE using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) precursors. The lowest threshold currents of 0.4 and 3.00 mA were obtained at 20 and 85°C, respectively, for a 150 μm-long 95%/98%-coated device
Keywords :
optical fabrication; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 0.4 mA; 1.3 micron; 150 micron; 20 C; 3.00 mA; 85 C; MOVPE growth; TBA; TBP; current blocking; p-substrate buried-heterostructure; strained MQW laser diodes; tertiarybutylarsine; tertiarybutylphosphine; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951510
