Title :
Low-Power Circuits for a 2.5-V, 10.7-to-86-Gb/s Serial Transmitter in 130-nm SiGe BiCMOS
Author :
Dickson, Timothy O. ; Voinigescu, Sorin P.
Abstract :
Low-power building blocks for a serial transmitter operating up to 86 Gb/s are designed and implemented in a 130-nm SiGe BiCMOS technology with 150-GHz SiGe fT HBT. Design techniques are presented which aim to minimize high-speed building block power consumption. They include lowering the supply voltage by employing a true BiCMOS high-speed logic family, as well as reducing current consumption by trading off tail currents for inductive peaking. A serial transmitter testchip consuming under 1 W is fabricated and operation is verified up to 86 Gb/s at room temperature (92 Gb/s and 71 Gb/s at 0degC and 100degC, respectively). The circuit operates from a 2.5-V supply voltage, which is the lowest supply voltage for circuits at this data rate in silicon technologies reported to date.
Keywords :
BiCMOS logic circuits; Ge-Si alloys; bipolar logic circuits; logic design; low-power electronics; BiCMOS high-speed logic family; BiCMOS technology; SiGe - Binary; bit rate 10.7 Gbit/s to 86 Gbit/s; current consumption; frequency 150 GHz; heterojunction bipolar transistor; high-speed building block power consumption; inductive peaking; low-power circuits; off tail currents; serial transmitter; size 130 nm; temperature 0 C; temperature 100 C; voltage 2.5 V; BiCMOS integrated circuits; Circuit testing; Energy consumption; Germanium silicon alloys; Heterojunction bipolar transistors; Logic; Silicon germanium; Tail; Transmitters; Voltage; 100 G Ethernet; BiCMOS; CML; Colpitts VCO; SiGe HBT; inductors; multiplexer; serial transmitter;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2007.904152
