Nearly chirp-free electroabsorption modulation using InGaAs-InGaAlAs-InAlAs coupled quantum wells

Author

Hou, H.Q. ; Chang, T.Y.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

7

Issue

2

fYear

1995

Firstpage

167

Lastpage

169

Abstract

We present an electroabsorption modulator based on slightly asymmetric InGaAs-InGaAlAs-InAlAs coupled quantum wells operated in the normally-off mode. The device exhibits a large change of the absorption coefficient in the vicinity of the zero-bias exciton peak wavelength with a very small change of the refractive index. The maximum excursion of the chirp parameter over the entire span of the bias voltage is less than /spl plusmn/0.1 for a specific wavelength or /spl plusmn/0.4 over a 12/spl sim/14 -nm range. This structure is promising for low-chirp, high bit-rate electroabsorption modulators.<>

Keywords

III-V semiconductors; absorption coefficients; aluminium compounds; electro-optical modulation; electroabsorption; excitons; gallium arsenide; gallium compounds; indium compounds; refractive index; semiconductor quantum wells; InGaAs-InGaAlAs-InAlAs; InGaAs-InGaAlAs-InAlAs coupled quantum wells; absorption coefficient; bias voltage; chirp parameter; electroabsorption modulator; low-chirp high bit-rate electroabsorption modulators; nearly chirp-free electroabsorption modulation; normally-off mode; refractive index; slightly asymmetric InGaAs-InGaAlAs-InAlAs coupled quantum wells; zero-bias exciton peak wavelength; Absorption; Chirp modulation; Diodes; Fiber lasers; Frequency; Indium compounds; Quantum cascade lasers; Quantum well lasers; Refractive index; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.345911

Filename

345911