DocumentCode
1225479
Title
AlGaInP LEDs using reactive thermally evaporated transparent conducting indium tin oxide (ITO)
Author
Aliyu, Y.H. ; Morgan, D.V. ; Thomas, H. ; Bland, S.W.
Author_Institution
Sch. of Eng., Univ. of Wales Coll. of Cardiff, UK
Volume
31
Issue
25
fYear
1995
fDate
12/7/1995 12:00:00 AM
Firstpage
2210
Lastpage
2212
Abstract
Reactive thermally evaporated transparent conducting indium tin oxide (ITO) layers are used as window material and for current spreading layers on AlGaInP light emitting diodes (LEDs). The sheet resistance of the ITO films deposited is of the order of 4.5 Ω/□ with up to 90% transmission in the visible region of the spectrum. In all cases, the devices incorporating the ITO layer gave a marginally greater output (10%) than the standard non-ITO devices
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; semiconductor materials; semiconductor thin films; transparency; vacuum deposited coatings; AlGaInP; ITO; InSnO; LEDs; current spreading layers; light emitting diodes; reactive thermally evaporated transparent conducting layers; sheet resistance; visible region; window material;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19951520
Filename
481053
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